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   DSEP12-12B ns 14 A TVJ =°C25 reverse recovery time A 23 70 300 ns IRM max. reverse recovery current IF =A;15 VR =V800 T=125°CVJ -diF/dt =A/μs500 trr TVJ =°C25 T=125°CVJ V = VR 1200 Symbol Definition Ratings typ. max. IR V IFAV A VF 3.25 RthJC 1.6 K/W min. 12 VRSM V 100 T = 25°CVJ T = °CVJ 150 mA 0.5 V = VR 1200 T = 25°CVJ I = AF 15 V T = °CC 130 Ptot 95 W T = 25°CC RthCH K/W 0.50 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 3.96 T = 25°CVJ VF0 V 1.00 T = °CVJ 175 rF 55 m? V 2.06 T = °CVJ 150 I = AF 15 V 2.89 I = AF 30 I = AF 30 threshold voltage slope resistance for power loss calculation only μA VRRM V 1200 max. repetitive reverse blocking voltage T = 25°CVJ CJ 5 junction capacitance V = VR 600 T = 25°Cf = 1 MHz VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°CV = 0 VR VJ max. forward surge current T = °CVJ 175 90 A rectangular 0.5d = average forward current thermal resistance junction to case thermal resistance case to heatsink Fast Diode 1200 IXYS reserves the right to change limits, conditions and dimensions. 20131029c Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |